| 摘要 |
PURPOSE:To realize high speed advancement of operation speed and to improve reliability by constituting a logical circuit out of a self-alignment bipolar transistor, and constituting a memory circuit out of a conventional type bipolar transistor. CONSTITUTION:The bipolar transistor Tr of the memory cell of a memory circuit is electrically isolated from other region with an element isolating region composed of a semiconductor substrate 2, a thin groove 6, an insulating film 8, a buried material 9 and a p<+>-type semiconductor region 7. The thin groove 6 is constituted in the depth that it pierces an n<->-type epitaxial layer 3 grown at the main face of a semiconductor substrate 2 and reaches the main face part of the semiconductor substrate 2, and it is formed by anisotropic etching. And each bipolar transistor Tr of a logical circuit and a power source circuit is constituted in vertical structure having an electrode for drawing out emitter which does insulation isolation by self-alignment to an electrode 20 for drawing out base and that one part overlaps the electrode 20 for drawing out base. Wiring 31, wiring 33, wiring 35 are laminated, respectively, in order on this bipolar transistor Tr. |
