| 摘要 |
<p>PURPOSE:To accurately transfer an ultrafine pattern of a submicron level by forming a supporting substrate of an X-ray absorber pattern made of heavy metal of a single bond carbon film. CONSTITUTION:After a silicon nitride film is formed on one side face of an Si single crystalline substrate 1, it is patterned in a desired shape 2. Then, a single bond carbon film 3 is formed 2-3mum thick on the substrate 1. Heavy metal for absorbing an X-ray, such as Au, Ta, W, Mo, etc., is formed approx. 1mum thick thereby by depositing, electro-depositing, sputtering, etc., and formed in a desired X-ray absorption pattern 4 by an EB lithography and dry or wet etching process. Eventually, the substrate 1 is back edged with the silicon nitride pattern 2 as a protective film, the film 3 for supporting the pattern 4 is secured to an Si single crystalline frame to be completed. Since the X-ray aligning mask has excellent heat dissipation and mechanical strength, the thermal expansion of the mask substrate is alleviated, and an accurate pattern transfer can be realized.</p> |
