| 摘要 |
The invention comprises a varactor tuning diode for use in a voltage controlled oscillator with a fast-hopping capability and short settling time for resonant frequency changes wherein the varactor tuning diode comprises an MOS structure with an oxide layer with thick and thin segments contiguous with and below the conductive metal layer, a permanently inverted P+ silicon area and a space-charge region terminating at the oxide layer a significant distance away from the planar PN junction such as to isolate the surface effects and bulk effect.
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