发明名称 |
Method for production of compound semicondutor devices |
摘要 |
This invention is related to the method for production of semiconductor devices suitable for increasing the integration density of semiconductor integrated circuits, especially GaAs semiconductor IC devices. This invention uses no third wiring metal, contact hole or through hole for connection between the Schottky junction and ohmic electrodes formed on the GaAs semiconductor substrate required in the conventional technology, but provides the method for direct connection between the two electrodes stated above by means of vapor deposition, ion implantation, sputtering, CVD, plasma CVD, dry etching and wet etching. Since the application of this invention enables the two electrodes stated above to be directly connected with high yield, the element area at the connecting portion can be reduced to less than half as compared with the same required in the conventional method, the total element area can be reduced greatly.
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申请公布号 |
US4902635(A) |
申请公布日期 |
1990.02.20 |
申请号 |
US19880175704 |
申请日期 |
1988.03.31 |
申请人 |
THE AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY |
发明人 |
IMAMURA, YOSHINORI;MIYAZAKI, MASARU;TERANO, AKIHISA;MATSUNAGA, NOBUTOSHI;YANAZAWA, HIROSHI |
分类号 |
H01L21/338;H01L21/768;H01L21/8252;H01L23/532;H01L29/417;H01L29/423;H01L29/812 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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