| 摘要 |
PURPOSE:To selectively photoelectrically convert efficiently a plurality of specific wavelength lights by providing a plurality of different band gap energy bands in one absorption layer, and a plurality of electrodes for externally leading a photoelectric conversion current generated at each energy band. CONSTITUTION:A p<+> type InP layer 2, an N-type InP avalanche region layer 3 and an N-type InGaAs absorption layer 4 provided with an electrode terminal 6 on its top are sequentially formed on a p+ type InP substrate 1 provided with an electrode terminal 5 in its bottom. Electrodes 7-9 are provided in response to the difference of band gap energies in the absorption layer at the layer 4, and the energy bands are so formed between a conduction band 12 and a valence band 11 as to respond to input wavelength lights 18-20. Thus, a plurality of specific wavelength lights can be selectively photoelectrically converted efficiently. |
