| 摘要 |
<p>PURPOSE:To obtain a highly integrated and greatly reliable semiconductor device having a fine line width wiring which is not toxic, has a low specific resistivity and, further, has an excellent electromigration strength by forming the wiring of Cu alloy having a tensile strength not less than 25kg/mm<2>. CONSTITUTION:A semiconductor device has a wiring 6 provided on a semiconductor layer with an insulating film 3 between. The wiring 6 is made of Cu alloy having a tensile strength not less than 25kg/mm<2>. By forming the wiring of Cu alloy having a specific tensile strength and a specific resistivity not higher than 3muOMEGAcm, an electromigration strength can be further improved and, even if the line width of the wiring is as fine as 1mum or smaller, excellent electromigration strength can be exhibited. With this constitution, the highly integrated and greatly reliable semiconductor device having fine line width wiring 6 which is not toxic, with low specific resistivity and, further, having excellent electromigration strength can be obtained.</p> |
