| 摘要 |
According to the present invention, an apparatus for correcting a pattern film wherein an organic compound vapor is directed to a defect in a mask or IC while an ion beam is irradiated and scanned for depositing film on the white defect is furnished with a circuit for calculating film deposition area based on the reproduced image of a mask pattern, whereby elongating the total scanning time by inserting blank time in the scanning time, during which the ion beam is not irradiated (this operation is hereinafter referred to as blanking), when the ratio of the film deposition area to the ion beam current for an organic compound directed by a gas gun is lower than a predetermined level. Because of this operation, the molecule of the organic compound vapor is sufficiently deposited on the mask of IC surface, and therefore, a film having good light shielding or good conductance can be deposited with strong bonding.
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