| 摘要 |
A single plate capacitor includes a dielectric substrate having high dielectric constant, a first SiO2 film formed ona lower main surface of the dielectric substrate, a first TiW film formed on the first SiO2 film, a solder diffusion barrier film of Pt, Pd or Ni formed on the first TiW film, a first Au film formed on the solder diffusion barrier film, a second SiO2 film formed on an upper main surface of the dielectric substrate, a second TiW formed on the second SiO2 film and a second Au film formed on the second SiO2 film.
|
