| 摘要 |
This invention relates to a dielectric composition comprising: (a) about 30 % to about 100 % by weight of a glass composition selected from the group consisting of: (a-1) a bismuth-free, lead-free or low-lead containing glass composition having a glass transition temperature in the range of about 600 DEG C to about 800 DEG C; (a-2) a mixture of two bismuth-free, lead-free or low-lead containing glass compositions comprising a first glass composition having a glass transition temperature in the range of about 585 DEG C to about 620 DEG C and a second glass composition having a glass transition temperature in the range of about 765 DEG C to about 815 DEG C; or (a-3) a mixture of three bismuth-free, lead-free or low-lead containing glass compositions comprising a first glass composition having a glass transition temperature in the range of about 585 DEG C to about 620 DEG C, a second glass composition having a glass transition temperature in the range of about 765 DEG C to about 815 DEG C, and a third glass composition having a glass transition temperature in the range of about 650 DEG C to about 720 DEG C; (b) up to about 30 % by weight of at least one expansion modifier; and (c) up to about 40 % by weight of at least one refractory oxide. This invention also relates to thick-film dielectric pastes and dielectric tapes comprising the foregoing dielectric composition. The invention also relates alumina base substrates having the foregoing dielectric composition bonded to at least one surface thereof, and to a method of bonding the foregoing dielectric composition to alumina base substrates. |
