| 摘要 |
<p>PURPOSE:To suppress the generation of a display defect based on a current leak in an additional capacity part by interposing a protective insulating film and a gate insulating film between an additional capacity electrode and a picture element electrode. CONSTITUTION:A picture element 24 which is driven through a thin film transistor by a matrix array is formed on a protective insulating film 35, and between this picture element 24 and the corresponding additional capacity electrode 26, the film 35 and a gate insulating film 30 are interposed. Accordingly, an insulation failure between the electrode 24 and 26 based on a pin hole of the insulating film and a dielectric film is decreased effectively, and the generation of a display defect caused by a leak current of an additional capacity can be suppressed.</p> |
