| 摘要 |
PURPOSE:To avoid the deterioration of the diode characteristics including a light emission output by a method wherein, in order to form the P-type layer ohmic electrode of an Si-doped GaAs infrared light emitting diode, P-type impurity such as Zn is diffused into the surface of the P-type layer under a temperature not higher than a diode forming epitaxial growth completing temperature and then an Al electrode is formed. CONSTITUTION:An N-type epitaxial layer (b) and a P-type epitaxial layer (a) are built up on an Si-doped GaAs single crystal substrate (c) with melted polycrystalline GaAs to which Si is added to complete an Si-doped GaAs infrared light emitting diode epitaxial wafer. Then, after pretreatments such as etching, silicon and zinc are provided in a high purity quartz sealing tube and the epitaxial wafer is put into the sealing tube and the tube is evacuated and sealed. Then diffusion is carried out under a temperature not higher than an epitaxial growth completing temperature to form a P<+>-type layer. After that, Al 2 is evaporated on the P<+>-type layer. Further, the substrate side surface of the epitaxial wafer is polished and AuGe/AuNi/Au are evaporated onto the polished surface in this order to form an N-type substrate side electrode 1 and etched to provide pellets to be diced. With this constitution, thermal damage against the crystal is suppressed and the light emitting efficiency and reliability can be improved. |
