| 摘要 |
PURPOSE:To decrease the number of photomasks used for a manufacture process and to facilitate mask control by forming two kinds of patterns of materials which differ in light absorption characteristics on one photomask. CONSTITUTION:The photomask 1 which has the two kinds of patterns is formed on a transparent glass substrate 2 and a 1st pattern 3 is made of a material which absorbs all wavelength components of ultraviolet light. A 2nd pattern 4, on the other hand, includes the 1st pattern 3 as part of its constitution area and its pattern area 5 which does not coincide with at least the 1st pattern is formed of a material which increases light transmissivity in the ultraviolet- light wavelength range with the wavelength. Therefore, when resist which has high sensitivity on the long-wavelength side is used, the 1st pattern 3 is obtained and when resist which has low sensitivity on the long-wavelength side is used, the 2nd pattern 4 consisting of the patterns 3 and 5 in combination is obtained. Consequently, the number of photomasks can be decreased, the quality is maintained, and the control is facilitated. |
