| 摘要 |
PURPOSE:To prevent decrease of current amplification factor hFE for improving characteristics of a transistor by connecting an emitter region and a base lead- out region to a base region directly under a mask while isolating the emitter region from the base lead-out region in the part not directly under the mask. CONSTITUTION:A polycrystalline silicon layer is etched by using a masking material 10 and resist having predetermined configurations so that the polycrystalline silicon layer is patterned into configurations as desired. Thereby, patterns of regions 11a, 11b, 12a, 12b and 12c for providing a collector region, a collector lead-out region, a base region, a base leadout region and an emitter region, respectively, are formed. Directly under the masking material 10, the region 12b for providing the base lead-out region and the region 12c for providing the emitter region are connected to the region 12a for providing the base region, while, in the part not directly under the masking material 10, the region 12b for providing the base lead-out region is isolated from the region 12c for providing the emitter region. |
