| 摘要 |
PURPOSE:To enhance intrinsic efficiency by providing parts in a groove formed in a semiconductor substrate or on the semiconductor substrate in a laminated pattern in a radiation detecting apparatus wherein a DRAM in a detecting part. CONSTITUTION:In a P-type semiconductor substrate 1, N<+> impurity diffused layers 2 and 3 which are to become the drain and the source of a switching transistor are formed by an arsenic ion implanting method and the like. A gate insulating film 4, a word line 5 and a bit line 6 are further formed. The drain 2 and the bit line 6 are electrically connected through a contact window 7. A groove 10 is formed in the substrate 1 by dry etching and the like. A storage electrode 12 is formed in the groove 10. The insulating and isolating region of the switching transistor is formed at the upper part of the groove 10. The detecting parts of this radiation detecting apparatus are a depletion region immediately beneath the source 3 and a depletion region of a capacitance insulating film 11 on the side of the substrate 1. Since the occupying rate in a unit cell is large, the efficiency for collecting electrons which are generated with alpha rays is high.
|
