| 摘要 |
PURPOSE: To improve the transmittivity, heat resistance and chemical stability for X-rays and visible rays by forming an amorphous C film by the plasma evaporation method on an Si or quartz glass wafer. CONSTITUTION: An amorphous C film 102 is formed by the plasma evaporation method on an Si or quartz glass wafer 101. On the back of the wafer 101 an insulation film 104 is deposited and partly etched to form a mask through which the wafer 101 is then wet etched with a KOH soln. On the film 102, an Au or W metal fiber 1205 is deposited, and a resist pattern 106 is formed thereon and etched to form an integrated circuit pattern, thus obtaining a homogeneous and wide thin film superior in transmittivity, heat resistance, chemical stability and strength for X-rays and visible rays by the plasma chemical vapor deposition. On the wafer 101 an aggregation compensating fiber 103 and amorphous C film 102 are laminated to compensate the compression aggregation of the C film and improve the strength and film thickness uniformity. |
