发明名称 RANDLOZE MOEDERSCHIJF-HALFGELEIDERINRICHTING.
摘要 <p>A borderless master slice semiconductor device is disclosed which comprises a plurality of first conduction type well regions arranged in a matrix type on the whole face of a second conduction type wafer; a plurality of second conduction type MOS transistor groups; a plurality of first conduction type diffusion regions arranged alterntely with the said second conduction type MOS transistor groups on the same row; a plurality of first conduction type MOS transistor groups arranged in a row direction facing opposingly with said second conduction type MOS transistor groups; and a plurality of second conduction type diffusion regions arranged alternately with said first conduction type MOS transistor groups on the same row. The device of the present invention thus constituted will bring the result that the master chip can be designed arbitrarily upon to the optimum size correspondingly with customer's order and that the production process can be singularized and the product control can be simplified.</p>
申请公布号 NL8901301(A) 申请公布日期 1990.02.16
申请号 NL19890001301 申请日期 1989.05.24
申请人 SAMSUNG ELECTRONICS CO., LTD. TE SUWON-CITY, ZUID-KOREA. 发明人
分类号 H01L21/822;H01L21/301;H01L21/82;H01L27/04;H01L27/118 主分类号 H01L21/822
代理机构 代理人
主权项
地址