| 摘要 |
PURPOSE:To make it possible to sufficiently remove a residual resist by treating a photoresist with hydrofluoric acid after removing the photoresist used for a mask by an org. peeling method. CONSTITUTION:A photoresist film 2 is selectively formed on a semiconductor wafer 1, and then a treatment for forming a semiconductor element, such as etching, etc., is performed on the film 2. Next, the wafer 1 is etched with the hydrofluoric acid to remove the residual resist from the wafer 1 after removing an unwanted film 2 from the wafer by the org. peeling method. And, alternatively, the unwanted film 2 is peeled from the wafer by the org. peeling method, and then, the wafer is rinsed with an aqueous solution of hydrogen peroxide, followed by being treated the wafer with the hydrofluoric acid. |
