| 摘要 |
<p>PURPOSE:To prevent device yield from being lowered by eliminating conductive foreign matter on a second conductive wiring by forming a third insulating film pattern on a semiconductor substrate through a first conductive wiring pattern, and further forming a second conductive wiring pattern on the upper part of the third insulating film pattern. CONSTITUTION:There are formed on a semiconductor substrate 1 a first conductive wiring 2 pattern, a third insulating film 3 pattern, a second conductive wiring 5 pattern, and a passivation film. The insulating film 3 pattern 4 is constructed so as not to produce its etched substrate upon etching because of the existence of the wiring 2 pattern. Accordingly, the insulating film 3 pattern has the same shape as that of the insulating film 3 in another wafer and prevents a photoresist from being partly left behind upon a photolithography process. Thus, conductive foreign matter on the wiring 5 is eliminated to prevent device yield from being lowered.</p> |
