| 摘要 |
<p>Preferred embodiments include a monolithic uncooled infrared detector array of bolometers fabricated over a silicon substrate (142); the bolometers include a stack (144) of oxide (146), TiN (148), a-Si:H (150), TiN (152), oxide (154) with the TiN forming the infrared absorbers and resistor contacts and the a-Si:H the resistor with a high temperature coefficient of resistivity. The resistor is suspended over the silicon substrate (142) by metal interconnects (154 and 156) and related processing circuitry is formed in the silicon substrate (142) beneath the resistor.</p> |
