Amorphous silicon photodiode and method of producing the same.

摘要

An amorphous silicon photodiode comprising a substrate (1); a lower electrode (2) formed on the substrate; an amorphous silicon layer (3) made of i-type hydrogenated amorphous silicon (i-a-Si:H) having a carbon content of 1 x 10<1><8> atom/cm<3> or less and formed on the lower electrode; and an upper electrode (4) formed on the amorphous silicon layer. The photodiode has an improved ratio of residual current to current generated under light illumination of 1% or less.