| 摘要 |
<p>A semi-conductor device has a semi-conductor substrate (101, 301) and a connector (108, 109, 111, 308, 309, 311) separated from one another by an insulating film (102, 302) and connected to one another at a contact region by way of a contact hole formed in the insulating film. The connector includes an Al or Al alloy layer (111, 311) and a barrier layer structure (108, 109, 308, 309), the portion of the barrier layer structure in the contact region being different from the portion of the barrier layer structure on the insulating film, and the portion of the barrier layer structure in the contact region comprising a first layer (109, 309) of a refractory metal nitride and a second layer (108, 308) of a refractory metal silicide. In the manufacture of such a device, the portion of the barrier layer structure in the contact region is subjected to rapid thermal annealing at a temperature of 600 DEG C to 1000 DEG C to create the difference in the two portions.</p> |
