| 摘要 |
PURPOSE:To alleviate the effect caused by the variability of a bonding wire in length and inductance on a high frequency property by providing a means of small area at a low cost by a method wherein an MIM capacitor is provided near to a DC bias bonding pad and concurrently a grounding means is provided to ground the DC bias bonding pad. CONSTITUTION:A metal-insulator-metal(MIM) capacitor 6 is provided near to a DC bias bonding pad 3 of a microwave monolithic integrated circuit 1, and concurrently a grounding means is provided to ground the MIM capacitor 6 making the DC bias bonding pad 3 shortcircuited as to a high frequency component. For instance, the above MIM capacitor 6 is grounded by making a metal layer above it connected with a metal chip carrier 7 through a bonding wire 4, and a metal layer under the MIM capacitor 6 is connected to the DC bias bonding pad 3 and a wiring pattern 9 by means of through-hole 8a and 8b respectively, and a DC bias wire 5 is wire-bonded to the DC bias bonding pad 3. |
