发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To strictly judge a displacement of a scale with reference to a substratum independently in an X-direction and a Y-direction by forming a vernier scale with reference to a main scale and by a different substratum process. CONSTITUTION:Main scales 5a to 5e have a self-alignment relationship with wiring parts 2a, 2b; main scales 6a to 6e to have a self-alignment relationship with patterns of field oxide films 1a, 1b. That is to say, as vernier patterns, main scales 4a to 4e in a Y-direction are formed simultaneously when the field oxide films 1a, 1b are formed on a substrate; after that, the main scales 5a to 5e in an X-direction are formed simultaneously when the gate electrodes 2a, 2b are formed; vernier scales 6a to 6e, 7a to 7e are formed simultaneously when a contact 3 is formed. The vernier patterns formed in this manner can check a displacement of a scale with a reference to a substratum between individual processes in the X-direction and the Y-direction.
申请公布号 JPH0242741(A) 申请公布日期 1990.02.13
申请号 JP19880193112 申请日期 1988.08.01
申请人 NEC CORP 发明人 HAMADA HIROYUKI
分类号 H01L21/027;H01L21/66 主分类号 H01L21/027
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