| 摘要 |
PURPOSE:To obtain a fine pattern with a large aspect ratio easily by converting a thin resist pattern into a thick SiN:H pattern having a side wall vertical to a substrate, then forming a desired pattern through oblique vapor deposition method utilizing said side wall. CONSTITUTION:An SiN:H film 12 with a predetermined thickness is deposited on one surface of an arbitrary substrate 11 by using plasma CVD process, and an arbitrary resist pattern 13 is formed on this SiN:H film 12 by utilizing electron beam exposure technique. Then, the resist pattern 13 is used as a mask and reactive ion etching process utilizing CF4 gas is carried out to incinerate and remove the resist to obtain a SiN:H pattern 12. A predetermined metal is deposited from obliquely above on the SiN:H pattern 12 by vacuum deposition process, and after removal according to ion etching process or reactive ion etching process a desired metal pattern 14 can be obtained. Thus, a pattern with a large aspect ratio and high precision can be obtained very easily. |
