发明名称 |
Semiconductor memory |
摘要 |
A semiconductor memory comprises a capacitor with a data storage portion, and an insulated-gate field-effect transistor. The capacitor is formed by a plate which is made up of the side walls and base of a groove formed in a semiconductor substrate, and by a capacitor electrode formed on the side walls and the base, over an insulation film, and which is connected electrically to the source or drain of the insulated-gate field-effect transistor. Various embodiments are provided for reducing size and preventing leakage between other memory cells, including forming stacked capacitors, forming the transistor over the capacitor, using a silicon-over-insulator arrangement for the transistor, forming a common capacitor plate and providing high impurity layers within the substrate.
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申请公布号 |
US4901128(A) |
申请公布日期 |
1990.02.13 |
申请号 |
US19860934556 |
申请日期 |
1986.11.24 |
申请人 |
HITACHI, LTD. |
发明人 |
SUNAMI, HIDEO;KURE, TOKUO;MIYAO, MASANOBU;KAWAMOTO, YOSHIFUMI;SHIMOHIGASHI, KATSUHIRO;SAKAI, YOSHIO;MINATO, OSAMU;MASUHARA, TOSHIAKI;KOYANAGI, MITSUMASA;SHIMIZU, SHINJI |
分类号 |
G11C11/404;H01L27/108;H01L29/94 |
主分类号 |
G11C11/404 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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