| 摘要 |
PURPOSE:To realize a small-sized device by constituting a wiring region to connect an impurity diffusion region and a gate by using a layer different from a resistance layer for a resistance load. CONSTITUTION:On the surface of an Si substrate 10, a field oxide film 11 is formed, which is extended to form a gate oxide film 41 on the substrate 10 surface. By patterning a poly Si layer, a gate 27 is formed, and word wires and the like are formed at the same time. By using the gate 27 and the film 11 as masks, ion is implanted and impurity diffusion regions 5s, 7d are formed. An interlayer insulating film 42 is formed on the whole surface. By eliminating the film 42 at the end-portion of the gate 27, an aperture 28 is formed. By patterning the poly Si layer, a wiring layer 13 is formed. Via the layer 13, the impurity diffusion region 7d and the gate 27 are electrically connected. An interlayer insulating film 43 is formed on the whole surface, and covers the wiring layer 13. After an aperture 26 is formed, a poly Si Iayer is formed and patterned; a resistance layer 32 is left in the region of the aperture 26; the impurity diffusion region 5s is connected with the gate 27 via the layer 32; thereby the connection of a second contact region is performed. |
