| 摘要 |
PURPOSE:To form a semicustomized semiconductor integrated circuit in one chip by constituting an island-type semiconductor region having a conductivity type inverse to a substrate, at a wiring region position adjacent to a unit cell, and stretching a part of the island-type semiconductor region into the unit cell. CONSTITUTION:In a unit cell 1, a P-channel MOS transistor constituted of gate polycrystalline silicon 11a and a P-type diffusion layer 11b and an N- channel MOS transistor 12 constituted of gate polycrystalline silicon 12a and an N-type diffusion layer 12b are formed. In wiring regions on both outer sides of the unit cell 1, U-shaped island-type semiconductor regions 6 are formed. In the island-type semiconductor regions 6, impurity having a conductivity type inverse to a semiconductor substrate is diffused, and both ends of the regions 6 are stretched as far as to the inside of the unit cell 1. In this manner, a semicustomized semiconductor integrated circuit can be formed into a chip. |
