| 摘要 |
PURPOSE:To improve the accuracy of exposure of an electron beam by a method wherein an exposed field is divided into subfields arranged in cross stripes, a scanning in striped form is performed starting from the point most close to the drawn pattern and ending at the point close to the end section of the drawn pattern successively. CONSTITUTION:One exposed field is divided into the subfield to be arranged in cross stripes. For instance, after the beam is once deflected on the corners (X1 and Y1) of the exposure field, the first stripe (a) is exposed by deflecting the beam in a beam-blanking condition on the whole pattern (X2 and Y2) in the subfield located at the lower left. Then, after returning to the second strip (b) (X3 and Y3), the exposure is performed down to (X4 and Y4). After the exposure is performed as far as to (X2i and Y2i) in the same manner, one end (X1 and Y1) of the region to be exposed is deflected by shifting a stage, a grid detection is performed, a beam deflection is done on the other end (X2n and Y2n) of the region to be exposed and an exposure is performed on the next pattern. Through these procedures, the effect of hysteresis on the positional accuracy is limited to the minimum and the coupling accuracy of the subfields can be improved. |
