| 摘要 |
<p>PURPOSE:To cause decrease a floating capacity between a data line and a gate line and simultaneously, to prevent a short-circuit by securing an interval between the data line and gate line by means of the insulating film of two layers. CONSTITUTION:A shading film 12 corresponding to a thin film transistor forming part and a data line DL to connect a drain electrode D of a thin film transistor are formed on a transparent substrate 11 surface, and on a transparent insulating base film 13 formed on it, a source electrode S and the drain electrode D of the thin film transistor, a semiconductor layer 17 overlapped on the source and drain electrodes S and D and a picture element electrode 18 connected to the source electrode S are formed. Further on it, a gate insulating film 19 to be transparent is formed, and on it, a gate electrode G of the thin film transistor and a gate line GL are formed. The drain electrode D is connected to the data line DL in a contact hole 20 provided to the insulating base film 13. Consequently, by the insulating films 13 and 19 of two layers, the interval between the data line DL and gate line GL can be secured sufficient. Thus, a seal floating capacity between the data line DL and gate line GL is made small, and the short-circuit can be prevented.</p> |
