| 摘要 |
PURPOSE:To prevent the occurence of a part deteriorated in light intensity in a projected pattern between adjacent mask patterns owing to the distorsion of light intensity distribution thereof by providing notch parts in the facing parts of the adjacent mask patterns. CONSTITUTION:The notch parts 31 and 32 are provided in the corners of the rectangular mask patterns 1 and 2. At the time the mask patterns 1 and 2, which has been provided with the notches 31 and 32, are transferred onto the wafer, i.e., their projected surface, the light intensity thereof is distributed as shown by a figure: The pattern distortion of the corners has been properly corrected, and the light intensity is even throughout the groove pattern without the occurence of the deteriorated part. Since the notch parts 31 and 32 exist, the part weakened in the light intensity distribution has been corrected. Thus, the light intensity faithful to the mask pattern can be attained. |
