| 摘要 |
PURPOSE:To allow the effective confinement of light by laminating a clad layer consisting of a II-VI compd. semiconductor and a waveguide layer consisting of a II-VI compd. semiconductor having the refractive index larger than the refractive index of the clad layer to a part on a substrate. CONSTITUTION:This light guide has the GaAs substrate 1, the clad layer 2 consisting of ZnS and the waveguide layer 3 consisting of ZnSe. While the refractive index of the ZnSe of the waveguide layer 3 is 2.34 in the direction perpendicular to the boundary, the refractive index of the ZnS of the lower clad layer 2 is 2.31 and the upper part is the atm. of 1.0 refractive index and, therefore, the difference in the refractive index is sufficiently large. The struc ture in which the waveguide layer having 2.34 refractive index is sandwiched by the atm. of 1.0 refractive index is adopted even in the direction parallel with the boundary and, therefore, the difference in the refractive index is suffi ciently large. The confinement of light into the waveguide layer is effectively executed in this way and the absorption in the GaAs substrate is small. |
