| 摘要 |
PURPOSE:To enable measurement of the thickness of a resist film in each process by detecting the light reflected from the art that a semiconductor chip is not formed at the periphery of a semiconductor wafer. CONSTITUTION:Prior to applying coating liquid, reference measurement by a film measuring device 11 is done first. At this time, it is adjusted in advance such that an optical fiber 12 may be positioned above the surplus region 4a of a semiconductor wafer 1 at a point of time when a position detector 13 detected, e.g., the end of an orientation flat 2 by slowly rotating the semiconductor wafer 1. And according to the detection signal of the position detector 13, it is stored in advance as read-in of the reflected light signal at the film thickness measuring device 11, that is, as reference. Hereafter, resist liquid is supplied from a nozzle 14 so as to form a resist film, and again the optical fiber 12 of the film thickness measuring device 11 and the position detector 13 are shifted to the vicinity of the semiconductor wafer 1 so as to read reflected light signals from the part in the surplus region 4a and that there is no step such as wafer ID, etc., and compares them with the results of reference measurement to calculate the thickness of the resist film. |
