摘要 |
A semiconductor laser apparatus comprising a laser-oscillating area and a light-detecting area, both of which are formed on a single substrate, wherein said laser-oscillating area and said light-detecting area have a common semiconductor layer with a first polarity disposed on said substrate and a common active layer disposed on said semiconductor layer, and said layer-oscillating area of said laser-oscillating area and/or said light-detecting area has a cladding layer with a second polarity disposed on said active layer, said laser-oscillating area and said light-detecting area being separated by a groove formed from the upper face of said cladding layer to the region below said active layer, and the active layer of said laser-oscillation area being flat while the active layer of said light-detecting area is sloped. |
申请人 |
SHARP K.K., OSAKA, JP |
发明人 |
YOSHIDA, TOSHIHIKO, TENRI-SHI NARA-KEN, JP;TAKIGUCHI, HARUHISA;KANEIWA, SHINJI 101 KYOBATE MANSION, NARA-SHI NARA-KEN, JP;MATSUI, SADAYOSHI, TENRI-SHI NARA-KEN, JP |