| 摘要 |
PURPOSE:To shorten a reaction time for eutectization and avoid defective bonding by forming a metal film made of material same as solder material used when a semiconductor chip is mounted on a package is formed on the rear of a semiconductor wafer. CONSTITUTION:Ti as barrier metal is sputtered onto the rear of an Si wafer 3 on which a plurality of semiconductor elements are formed to form a Ti film 2. Then Au-Si, which is same as solder material used at the time of mounting, is sputtered to form an Au-Si film 1 on the Ti film 2. Therefore, if an Si chip formed by dicing the Si wafer 3 is mounted on a package, the Au-Si film 1 and the solder material are perfectly eutectized, so that the Si chip can be bonded to the package satisfactirily. |
