发明名称 AVALANCHE PHOTODIODE STRUCTURE
摘要 An avalanche photodiode structure has a graded magnesium guard ring formed by diffusion from an organic-metallic source. Suitably masked APD layers are placed in an open flow reactor and heated while bis (cyclopentadienyl) magnesium vapour is flowed over the APD layers. Hydrogen and group V precursors are passed simultaneously with the bis (cyclopentadienyl) magnesium vapour to prevent loss of group V elements from the surface of the device.
申请公布号 WO9001217(A1) 申请公布日期 1990.02.08
申请号 WO1989GB00855 申请日期 1989.07.27
申请人 BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY 发明人 DAVIS, LYNN;MACBEAN, MYLES, DONALD, ANGUS
分类号 H01L21/223;H01L31/0304;H01L31/107;(IPC1-7):H01L31/107;H01L31/030 主分类号 H01L21/223
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