发明名称 |
AVALANCHE PHOTODIODE STRUCTURE |
摘要 |
An avalanche photodiode structure has a graded magnesium guard ring formed by diffusion from an organic-metallic source. Suitably masked APD layers are placed in an open flow reactor and heated while bis (cyclopentadienyl) magnesium vapour is flowed over the APD layers. Hydrogen and group V precursors are passed simultaneously with the bis (cyclopentadienyl) magnesium vapour to prevent loss of group V elements from the surface of the device. |
申请公布号 |
WO9001217(A1) |
申请公布日期 |
1990.02.08 |
申请号 |
WO1989GB00855 |
申请日期 |
1989.07.27 |
申请人 |
BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY |
发明人 |
DAVIS, LYNN;MACBEAN, MYLES, DONALD, ANGUS |
分类号 |
H01L21/223;H01L31/0304;H01L31/107;(IPC1-7):H01L31/107;H01L31/030 |
主分类号 |
H01L21/223 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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