| 摘要 |
PURPOSE:To carry out growth by photo CVD irrespective of the kind of a raw gas by using gaseous carbon dioxide laser light as light energy at the time of supplying a raw gas onto the surface of a substrate and growing a chemical reaction product of the raw gas by the irradiation of light energy. CONSTITUTION:A substrate S is placed on the susceptor 2 in a reaction tube 1, and heated to 700-900 deg.C by the induction heating from a coil 3 outside the reaction tube. Gaseous SiH4 4a as the raw gas, gaseous SiF4 4b as the light absorbing gas, and gaseous H2 4c as the carrier gas are mixed in 1/50/50 ratio, and the mixture is introduced onto the substrate S in the reaction tube 1. Meanwhile, CO2 laser light 6 is regulated by an optical system 8 to make the beam wider than the substrate S, and passed in the vicinity of the surface of the substrate S from a ZnSe window 9 to irradiate the substrate. As a result, Si as the decomposition product of SiH4 can be formed on the substrate S at a low substrate temp., and a photo CVD product can be formed from the raw gas irrespective of the kind of the raw gas. |
