| 摘要 |
PURPOSE:To make it possible to form a through hole advantageous for step coverage by using two masks of a first through hole having large photoresist exposure and a second though hole having small photoresist exposure to etch at two stages. CONSTITUTION:A photoresist 1 is exposed 20 to 50% by using a mask 6, forming a sensitized section 7. Next, a mask 8 with a small through hole size is used to expose the unexposed section of the photoresist 1. Further, an anisotropic dry etching apparatus is used to overetch under the condition of the selection ratio 1 of the resist 1 ana a polymide 2, and then the resist 1 is separated, the through hole shape of the polymide 2 being in a step-like shape. A wiring 9 of the second layer is formed thereon, and a multilayer wiring semiconductor device is obtained. This makes it possible to form a through hole having smaller side etch and advantageous for step coverage. |
