| 摘要 |
<p>PCT No. PCT/JP89/00050 Sec. 371 Date Sep. 22, 1989 Sec. 102(e) Date Sep. 22, 1989 PCT Filed Jan. 20, 1989 PCT Pub. No. WO89/06862 PCT Pub. Date Jul. 27, 1989.A semiconductor apparatus of the present invention comprises, as, for example, shown in FIG. 5, a semiconductor region (32) of first conductivity type formed on a semiconductor substrate (31), and a semiconductor region (34) of second conductivity type formed in the semiconductor region (32) of first conductivity type, in which a first electrode (38a) is formed on the semiconductor region (34) of second conductivity type to form a capacitance through a dielectric layer (37), a second electrode (38c) connected to the semiconductor region (32) of first conductivity type is provided and a third electrode (38b) connected to the semiconductor region (34) of second conductivity type is provided, whereby easiness (capacitor) can be prevented from being affected by a junction capacitance between semiconductor layers of different conductivity types.</p> |
