MULTI LAYER PHOTOPOLYMERIC STRUCTURE FOR THE MANUFACTURING OF MESFET DEVICES WITH SUBMICROMETRIC GATE AND VARIABLE LENGTH RECESSED CHANNEL,申请号EP19870101800-传众专利搜索

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发明名称	MULTI LAYER PHOTOPOLYMERIC STRUCTURE FOR THE MANUFACTURING OF MESFET DEVICES WITH SUBMICROMETRIC GATE AND VARIABLE LENGTH RECESSED CHANNEL
摘要
申请公布号	EP0232894(A3)	申请公布日期	1990.02.07
申请号	EP19870101800	申请日期	1987.02.10
申请人	SELENIA INDUSTRIE ELETTRONICHE ASSOCIATE S.P.A.	发明人	CETRONIO, ANTONIO;MORETTI, SERGIO;COMPAGNUCCI, VITTORIA
分类号	G03F7/09;H01L21/027;H01L21/338;(IPC1-7):H01L21/00;G03F7/00;H01L21/28;H01L29/80	主分类号	G03F7/09
代理机构		代理人
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