CCD imager.

摘要

A CCD imager includes a large number of light receiving sections (6) each having in turn a semiconductor surface region (5) of a second conductivity type, a first semiconductor region (4) of a first conductivity type, a semiconductor region (3) of the second conductivity type and a second semiconductor region (1, 2) of the first conductivity type, vertically. The second semiconductor region (1, 2) is formed by a dual structure of a low concentration semiconductor region (2) and a high concentration semiconductor region (1). The dual structure provides for shutter at a lower voltage since the potential barrier along the depth of the light receiving section (6) is no longer effected by the amount of the stored charges, while spreading of the depletion layer at the junction is suppressed by the high concentration semiconductor region (1).