ION-IMPLANTING METHOD AND MANUFACTURE OF SEMICONDUCTOR DEVICE,申请号JP19880187010-传众专利搜索

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发明名称	ION-IMPLANTING METHOD AND MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要
申请公布号	JPH0237714(A)	申请公布日期	1990.02.07
申请号	JP19880187010	申请日期	1988.07.28
申请人	MATSUSHITA ELECTRIC IND CO LTD	发明人	OGAWA KAZUFUMI
分类号	H01L21/265	主分类号	H01L21/265
代理机构		代理人
主权项
地址

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