Method of improving yield of led arrays.

摘要

A high yield method for the fabrication of multi-element, gallium-arsenide-phosphide light emitting diode arrays having square light emitting elements 7903 square microns on 88.9 micron centers suitable for use in electronic/optical printers, is described. The resulting arrays at a current density of 200 A/cm<2> have 0.6% power efficiency and a radiant exitance of 3.8 W cm -2 with less than 2% standard deviation in element to element radiant exitance. The integrated, relatively low cost LED arrays, are particularly suitable for use in electronic/optical printing applications.