发明名称 WRITE CIRCUIT FOR NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To reduce write power consumption and to realize the low voltage of a write source voltage by constituting an IGFET connected in series to a memory device and turned on and off by write information in a reverse conduction type, and performing the constant current operation of the IGFET. CONSTITUTION:As a transistor which functions to switch write corresponding to the write information, the memory device M4 and the reverse conduction type IGFET M3 are used, and the low voltage is generated by providing a constant current operating device M6 on conversion circuits M5-M9 so as to execute the constant current operation, and it is applied on the gate of the switching transistor M3. In such a way, it is possible to perform the write with the low voltage, and furthermore, to control the write current after write at a constant current value, and to reduce the write power consumption, and furthermore, the write with a single power source of 5V can be performed.</p>
申请公布号 JPH0235691(A) 申请公布日期 1990.02.06
申请号 JP19880186019 申请日期 1988.07.26
申请人 NEC CORP 发明人 WATANABE TAKESHI
分类号 G11C17/00;G11C16/06;H01L21/8247;H01L27/10;H01L29/788;H01L29/792 主分类号 G11C17/00
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