| 摘要 |
PURPOSE:To improve the electrical reliability of a semiconductor device by a method wherein a polyether amide or polyether amide-imide layer, whose glass-transition temperature is of a range of 170-260 [ deg.C], is provided on the surface of a side, where is adhered to inner leads, of an insulative resin film layer as an adhesion layer. CONSTITUTION:A polyether amide or polyether amide-imide layer, whose glass- transition temperature is of a range of 170-260 [ deg.C], is provided between an insulative resin film layer 3B and inner leads 2A as an adhesion layer 3A (An insulating film of a two-layer structure, which is formed of the layers 3B and 3A, is adhered on the surface of the leads 2A.). Thereby, the adhesive strength of each of the leads 2A and a resin sealing material 6 with the polyether amide of polyether amide-imide layer is improved, tie peeling of the adhesive interface between the leads 2A and the layer or the material 6 and the layer can be prevented and water can be prevented from being bedewing on its peeled part. As a result, the leak of a current between the leads 2A can be reduced. |
