| 摘要 |
PURPOSE:To manufacture an element capable of high speed operation at low voltage by a method wherein a barrier layer not subjected to any substantial energy barriers to majority carriers implanted from an emitter layer to a paste layer but subjected to any substantial energy barriers to minority carriers is provided. CONSTITUTION:An N type collector layer 1, a P type base layer 2, an N type emitter layer 3, a barrier layer 5 provided between the emitter layer 3 and the base layer 2 are formed. A conductive band EC in the emitter.base junction with the electrons as majority carriers is not subjected to any potential spike or the energy barriers to be continuously smoothed out so that the electrons may be diffused similar to the case of normal pn junction not to cause the contact resistance in the hetero junction and the rise in operational voltage. On the other hand, a valence band EV in the emitter.base junction with the hole as minority carrier is subjected to the energy barriers so that the hole implantation from the base layer 2 to the emitter layer 3 may be small similar to the case of ordinary hetero junction bipolar transistor. |
