SUPER PRECISION FLATTENING METHOD FOR SILICON WAFER

摘要

PURPOSE:To work in a distortionless mirror face with correcting the dispersion in thickness by feeding the alkali solution in which the abrasive consisting of the particulate of a quartz of high purity is dispersed to the surface of the surface plate whose surface is smooth and rubbing the surface plate and a wafer. CONSTITUTION:The abrasive composed of the particulate of a high purity silica is fed in the space with the main face of at least one part of the surface plate with a smooth surface and a silicon wafer 11 and friction is executed with the relative pressurized movement of this surface plate and silicon wafer 11. As a result, working is progressed in order from the part of larger thickness of the silicon wafer 11 and a flattening wafer 14 having the work face 13 finished in a distortionless face is obtd. by correcting the dispersion in the thickness of the face inside even in case of the dispersion in the thickness inside the face on the silicon wafer 11 prior to working.