发明名称 |
Clamping sense amplifier for bipolar ram |
摘要 |
A sense amplifier is provided for a bipolar random access memory that has memory cells arranged in a column and a pair of bit lines for said column of memory cells. A first bipolar transistor has its collector-emitter path coupled to one of the bit lines of a pair, and a base coupled through a diode means to the second bit line. A second bipolar transistor has its collector-emitter path coupled to the second bit line and its base coupled through a second diode to the first bit line. The collectors of both of the bipolar transistors are coupled to provide an output signal. Resistors are coupled to a pulse source and to both of the bases of the bipolar transistors. A current sink is coupled to both of the select bit lines. The diode means are connected so as to be forward biased when the base-emitter junction of the transistor to which the diode means is coupled is also forward biased.
|
申请公布号 |
US4899311(A) |
申请公布日期 |
1990.02.06 |
申请号 |
US19880237470 |
申请日期 |
1988.08.29 |
申请人 |
UNISYS CORPORATION |
发明人 |
PETSCHAUER, RICHARD J.;BERGMAN, ROBERT J. |
分类号 |
G11C7/06;G11C11/416 |
主分类号 |
G11C7/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|