| 摘要 |
PURPOSE:To obtain a high density semiconductor integrated circuit by forming a semiconductor region on the top of a semiconductor substrate and forming a semiconductor element in which a signal flows elevationally at the region. CONSTITUTION:An n<+> type diffused layer 22 is formed on a P type Si substrate 1, and a thermally oxidized film 23 is formed. Semiconductor regions 26, 27 are formed by a vapor phase growing method on the top of the film. An n<+> type diffused layer 28 is formed in the hole of the region 27. Then, an oxidized film 29 is formed by thermally oxidizing. Polysilicon electrodes 30, 31 are formed on the region which corresponds to the gate oxidized film of the film 19, and an insulating film 32 is formed on the overal surface. Thereafter, the holes of the films 29, 32 are formed on the top of the region 26, and a semiconductor layer 23 is formed by a vapor phase growing method. Subsequently, the film 29 is etched with the electrode 30, thereby forming an n<+> type diffused layer 34. An oxidized film 35 is formed on the overall surface, and necessary holes are formed. A power source electrode 36, an output electrode 37 and a gate electrode 38 are respectively formed in the holes. |
