发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To shorten the manufacturing process of a semiconductor, to enhance processing precision, and to avoid damage of a substrate by forming a selectively reactive region on a substrate and repeating operations of alternately bringing 2 kinds of raw materials into contact with them. CONSTITUTION:A thin film is formed on the whole surface of the substrate 11, and the region 13, e.g., capable of producing a desired functional group is formed by irradiating the thin film with electromagnetic waves 12 through a photomask, then, the thin film is brought into contact with the raw material AXl (l>=2) to condense it with the functional group and to fix it, and then brought into contact with the raw material BYm (m>=2) to condense it with the functional group X, and in succession alternately brought into contact with one of AXl and BYm alone to selectively form an organic polymer (a) or an inorganic compound (b), where the polymer (a) is formed, preferably by growing polyester, polyamide, or polyimide through reactions I, II, and III, and the compound (b) is, preferably, formed by growing the oxide or nitride of an element of group II-VI.
申请公布号 JPH0233153(A) 申请公布日期 1990.02.02
申请号 JP19880182945 申请日期 1988.07.22
申请人 TOSHIBA CORP 发明人 HORIOKA KEIJI
分类号 G03F7/004;B32B9/00;C09D5/00;G03F7/38;H01L21/027;H01L21/205;H01L21/30;H01L21/312;H01L21/768;H01L23/522 主分类号 G03F7/004
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