| 摘要 |
PURPOSE:To improve impact resistant, thermal shock resistance, etc., of sintered material after processing by covering sintered material of silicon carbide with carbon powder after graining or abrading processing the same material and by resintering at a given temperature for given time in vacuum or in an inert gas atmosphere. CONSTITUTION:A sintered material of silicon carbide is produced and ground or abraded to give a desired product. In order to recover reduction in impact resistance and thermal shock resistance caused by microcracks occurring in processed face during grinding or abrading processing, the sintered material of silicon carbide after grinding or abrading processing is covered with carbon powder (e.g. graphite or carbon black). Then the sintered material is resintered at 1,800-2,150 deg.C for >=1 hours in vacuum or inert gas atmosphere. Consequently, the microcracks occurring in the processed face during grinding or abrading processing can be filled with the powder so that the sintered material of silicon carbide having excellent impact resistance, thermal shock resistance, appearance, etc., can be produced. |
